Semiconductor Device and Method

ABSTRACT

An embodiment device includes: an isolation region on a substrate; a first fin extending above a top surface of the isolation region; a gate structure on the first fin; and an epitaxial source/drain region adjacent the gate structure, the epitaxial source/drain region having a first main portion and a first projecting portion, the first main portion disposed in the first fin, the first projecting portion disposed on a first sidewall of the first fin and beneath the top surface of the isolation region.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of U.S. Provisional Application No.63/082,541, filed on Sep. 24, 2020, and U.S. Provisional Application No.63/065,575, filed on Aug. 14, 2020, which applications are herebyincorporated herein by reference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductor layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates an example of a FinFET in a three-dimensional view.

FIGS. 2 through 19B are views of intermediate stages in themanufacturing of FinFETs, in accordance with some embodiments.

FIGS. 20A and 20B are views of FinFETs, in accordance with some otherembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

According to various embodiments, source/drain recesses are patterned infins, and in isolation regions that are around the fins. Epitaxialsource/drain regions are grown in the source/drain recesses, so that theepitaxial source/drain regions have main portions in the fins, andprojecting portions that extend into (e.g., beneath the top surfaces of)the isolation regions. Forming additional source/drain recesses for theepitaxial source/drain regions to be grown in allows the volume of theepitaxial source/drain regions to be increased.

FIG. 1 illustrates an example of simplified Fin Field-Effect Transistors(FinFETs) in a three-dimensional view, in accordance with someembodiments. Some other features of the FinFETs (discussed below) areomitted for illustration clarity. The illustrated FinFETs may beelectrically connected or coupled in a manner to operate as, forexample, one transistor or multiple transistors, such as twotransistors.

The FinFETs include fins 52 extending from a substrate 50. Shallowtrench isolation (STI) regions 56 are disposed over the substrate 50,and the fins 52 protrude above and from between neighboring STI regions56. Although the STI regions 56 are described/illustrated as beingseparate from the substrate 50, as used herein the term “substrate” maybe used to refer to just the semiconductor substrate or a semiconductorsubstrate inclusive of isolation regions. Additionally, although thefins 52 are illustrated as being a single, continuous material of thesubstrate 50, the fins 52 and/or the substrate 50 may include a singlematerial or a plurality of materials. In this context, the fins 52 referto the portions extending between the neighboring STI regions 56.

Gate dielectrics 112 are along sidewalls and over top surfaces of thefins 52, and gate electrodes 114 are over the gate dielectrics 112.Source/drain regions 88 are disposed in opposite sides of the fin 52with respect to the gate dielectrics 112 and gate electrodes 114. Gatespacers 82 separate the source/drain regions 88 from the gatedielectrics 112 and the gate electrodes 114. An inter-layer dielectric(ILD) 92 is disposed over the source/drain regions 88 and the STIregions 56. In embodiments where multiple transistors are formed, thesource/drain regions 88 may be shared between various transistors. Inembodiments where one transistor is formed from multiple fins 52,neighboring source/drain regions 88 may be electrically connected, suchas through merging the source/drain regions 88 by epitaxial growth, orthrough coupling the source/drain regions 88 with a same source/draincontact.

FIG. 1 further illustrates several reference cross-sections.Cross-section A-A and is along a longitudinal axis of a fin 52 and in adirection of, for example, a current flow between the source/drainregions 88 of the FinFETs. Cross-section B-B is perpendicular tocross-section A-A and is along a longitudinal axis of a gate electrode114 and in a direction, for example, perpendicular to the direction ofcurrent flow between the source/drain regions 88 of the FinFETs.Cross-section C-C is also perpendicular to cross-section A-A and extendsthrough the source/drain regions 88 of the FinFETs. Subsequent figuresrefer to these reference cross-sections for clarity.

FIGS. 2 through 19B are views of intermediate stages in themanufacturing of FinFETs, in accordance with some embodiments. FIGS. 2,3, and 4 are three-dimensional views. FIGS. 5A, 13A, 14A, 15A, 16A, and17A are cross-sectional views illustrated along a similar cross-sectionas reference cross-section A-A in FIG. 1. FIGS. 5B, 13B, 14B, 15B, 16B,and 17B are cross-sectional views illustrated along a similarcross-section as reference cross-section B-B in FIG. 1. FIGS. 6A, 6B,7A, 7B, 8A, 8B, 9A, 9B, 10A, 10B, 11A, 11B, 12A, 12B, 18A, 18B, 19A, and19B are cross-sectional views illustrated along a similar cross-sectionas reference cross-section C-C in FIG. 1.

In FIG. 2, a substrate 50 is provided. The substrate 50 may be asemiconductor substrate, such as a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, or the like, which may bedoped (e.g., with a p-type or a n-type dopant) or undoped. The substrate50 may be a wafer, such as a silicon wafer. Generally, an SOI substrateis a layer of a semiconductor material formed on an insulator layer. Theinsulator layer may be, for example, a buried oxide (BOX) layer, asilicon oxide layer, or the like. The insulator layer is provided on asubstrate, typically a silicon or glass substrate. Other substrates,such as a multi-layered or gradient substrate may also be used. In someembodiments, the semiconductor material of the substrate 50 may includesilicon; germanium; a compound semiconductor including silicon carbide,gallium arsenide, gallium phosphide, indium phosphide, indium arsenide,and/or indium antimonide; an alloy semiconductor includingsilicon-germanium, gallium arsenide phosphide, aluminum indium arsenide,aluminum gallium arsenide, gallium indium arsenide, gallium indiumphosphide, and/or gallium indium arsenide phosphide; or combinationsthereof.

The substrate 50 has a n-type region 50N and a p-type region 50P. Then-type region 50N can be for forming n-type devices, such as NMOStransistors, e.g., n-type FinFETs. The p-type region 50P can be forforming p-type devices, such as PMOS transistors, e.g., p-type FinFETs.The n-type region 50N may be physically separated from the p-type region50P, and any number of device features (e.g., other active devices,doped regions, isolation structures, etc.) may be disposed between then-type region 50N and the p-type region 50P.

Fins 52 are formed in the substrate 50. The fins 52 are semiconductorstrips. In some embodiments, the fins 52 may be formed in the substrate50 by etching trenches in the substrate 50. The etching may be anyacceptable etch process, such as a reactive ion etch (RIE), neutral beametch (NBE), the like, or a combination thereof. The etch may beanisotropic.

The fins 52 may be patterned by any suitable method. For example, thefins 52 may be patterned using one or more photolithography processes,including double-patterning or multi-patterning processes. Generally,double-patterning or multi-patterning processes combine photolithographyand self-aligned processes, allowing patterns to be created that have,for example, pitches smaller than what is otherwise obtainable using asingle, direct photolithography process. For example, in one embodiment,a sacrificial layer is formed over a substrate and patterned using aphotolithography process. Spacers are formed alongside the patternedsacrificial layer using a self-aligned process. The sacrificial layer isthen removed, and the remaining spacers may then be used to pattern thefins 52. In some embodiments, the mask (or other layer) may remain onthe fins 52.

STI regions 56 are formed over the substrate 50 and between neighboringfins 52. The STI regions 56 are disposed around lower portions of thefins 52 such that upper portions of the fins 52 protrude from betweenneighboring STI regions 56. In other words, the upper portions of thefins 52 extend above the top surfaces of the STI regions 56. The STIregions 56 separate the features of adjacent devices.

The STI regions 56 may be formed by any suitable method. For example, aninsulation material can be formed over the substrate 50 and betweenneighboring fins 52. The insulation material may be an oxide, such assilicon oxide, a nitride, the like, or a combination thereof, and may beformed by a chemical vapor deposition (CVD) process, such as a highdensity plasma CVD (HDP-CVD), a flowable CVD (FCVD) (e.g., a CVD-basedmaterial deposition in a remote plasma system and post curing to make itconvert to another material, such as an oxide), the like, or acombination thereof. Other insulation materials formed by any acceptableprocess may be used. In some embodiments, the insulation material issilicon oxide formed by FCVD. An anneal process may be performed oncethe insulation material is formed. In an embodiment, the insulationmaterial is formed such that excess insulation material covers the fins52. Although the STI regions 56 are illustrated as a single layer, someembodiments may utilize multiple layers. For example, in someembodiments, a liner (not shown) may first be formed along a surface ofthe substrate 50 and the fins 52. Thereafter, a fill material, such asthose discussed above may be formed over the liner. A removal process isthen applied to the insulation material to remove excess insulationmaterial over the fins 52. In some embodiments, a planarization processsuch as a chemical mechanical polish (CMP), an etch-back process,combinations thereof, or the like may be utilized. The planarizationprocess exposes the fins 52 such that top surfaces of the fins 52 andthe insulation material are coplanar (within process variations) afterthe planarization process is complete. In embodiments in which a maskremains on the fins 52, the planarization process may expose the mask orremove the mask such that top surfaces of the mask or the fins 52,respectively, and the insulation material are coplanar (within processvariations) after the planarization process is complete. The insulationmaterial is then recessed to form the STI regions 56. The insulationmaterial is recessed such that upper portions of the fins 52 in then-type region 50N and in the p-type region 50P protrude from betweenneighboring portions of the insulation material. Further, the topsurfaces of the STI regions 56 may have a flat surface as illustrated, aconvex surface, a concave surface (such as dishing), or a combinationthereof. The top surfaces of the STI regions 56 may be formed flat,convex, and/or concave by an appropriate etch. The insulation materialmay be recessed using an acceptable etching process, such as one that isselective to the material of the insulation material (e.g., etches thematerial of the insulation material at a faster rate than the materialof the fins 52). For example, an oxide removal using, for example,dilute hydrofluoric (dHF) acid may be used.

The process described above is just one example of how the fins 52 andthe STI regions 56 may be formed. In some embodiments, the fins 52 maybe formed by an epitaxial growth process. For example, a dielectriclayer can be formed over a top surface of the substrate 50, and trenchescan be etched through the dielectric layer to expose the underlyingsubstrate 50. Homoepitaxial structures can be epitaxially grown in thetrenches, and the dielectric layer can be recessed such that thehomoepitaxial structures protrude from the dielectric layer. In suchembodiments, the fins 52 comprise the homoepitaxial structures, and theSTI regions 56 comprise the remaining portions of the dielectric layer.Additionally, in some embodiments, heteroepitaxial structures can beused for the fins 52. For example, the fins 52 can be recessed, and amaterial different from the fins 52 may be epitaxially grown over therecessed material. In such embodiments, the fins 52 comprise therecessed material as well as the epitaxially grown material disposedover the recessed material, and the STI regions 56 comprise theremaining portions of the dielectric layer. In an even furtherembodiment, a dielectric layer can be formed over a top surface of thesubstrate 50, and trenches can be etched through the dielectric layer.Heteroepitaxial structures can then be epitaxially grown in the trenchesusing a material different from the substrate 50, and the dielectriclayer can be recessed such that the heteroepitaxial structures protrudefrom the dielectric layer to form the fins 52. In such embodiments, thefins 52 comprise the heteroepitaxial structures, and the STI regions 56comprise the remaining portions of the dielectric layer. In someembodiments where homoepitaxial or heteroepitaxial structures areepitaxially grown, the epitaxially grown materials may be in situ dopedduring growth, which may obviate prior and subsequent implantationsalthough in situ and implantation doping may be used together.

Still further, it may be advantageous to epitaxially grow a material inn-type region 50N (e.g., a NMOS region) different from the material inp-type region 50P (e.g., a PMOS region). In various embodiments, upperportions of the fins 52 may be formed of silicon-germanium(Si_(x)Ge_(1-x), where x can be in the range of 0 to 1), siliconcarbide, pure or substantially pure germanium, a III-V compoundsemiconductor, a II-VI compound semiconductor, or the like. For example,the available materials for forming III-V compound semiconductorinclude, but are not limited to, indium arsenide, aluminum arsenide,gallium arsenide, indium phosphide, gallium nitride, indium galliumarsenide, indium aluminum arsenide, gallium antimonide, aluminumantimonide, aluminum phosphide, gallium phosphide, and the like.

Further, appropriate wells (not shown) may be formed in the fins 52and/or the substrate 50. In some embodiments, a p-type well may beformed in the n-type region 50N, and a n-type well may be formed in thep-type region 50P. In some embodiments, p-type well or a n-type well areformed in both the n-type region 50N and the p-type region 50P.

In the embodiments with different well types, the different implantsteps for the n-type region 50N and the p-type region 50P may beachieved using a photoresist and/or other masks (not shown). Forexample, a photoresist may be formed over the fins 52 and the STIregions 56 in the n-type region 50N. The photoresist is patterned toexpose the p-type region 50P. The photoresist can be formed by using aspin-on technique and can be patterned using acceptable photolithographytechniques. Once the photoresist is patterned, a n-type impurity implantis performed in the p-type region 50P, and the photoresist may act as amask to substantially prevent n-type impurities from being implantedinto the n-type region 50N. The n-type impurities may be phosphorus,arsenic, antimony, or the like implanted in the region to aconcentration of equal to or less than about 10¹⁸ cm⁻³, such as in therange of about 10¹⁶ cm⁻³ to about 10¹⁸ cm⁻³. After the implant, thephotoresist is removed, such as by an acceptable ashing process.

Following the implanting of the p-type region 50P, a photoresist isformed over the fins 52 and the STI regions 56 in the p-type region 50P.The photoresist is patterned to expose the n-type region 50N. Thephotoresist can be formed by using a spin-on technique and can bepatterned using acceptable photolithography techniques. Once thephotoresist is patterned, a p-type impurity implant may be performed inthe n-type region 50N, and the photoresist may act as a mask tosubstantially prevent p-type impurities from being implanted into thep-type region 50P. The p-type impurities may be boron, boron fluoride,indium, or the like implanted in the region to a concentration of equalto or less than 10¹⁸ cm⁻³, such as in the range of about 10¹⁶ cm⁻³ toabout 10¹⁸ cm⁻³. After the implant, the photoresist may be removed, suchas by an acceptable ashing process.

After the implants of the n-type region 50N and the p-type region 50P,an anneal may be performed to repair implant damage and to activate thep-type and/or n-type impurities that were implanted. In someembodiments, the grown materials of epitaxial fins may be in situ dopedduring growth, which may obviate the implantations, although in situ andimplantation doping may be used together.

In FIG. 3, a dummy dielectric layer 62 is formed on the fins 52. Thedummy dielectric layer 62 may be, for example, silicon oxide, siliconnitride, a combination thereof, or the like, and may be deposited orthermally grown according to acceptable techniques. A dummy gate layer64 is formed over the dummy dielectric layer 62, and a mask layer 66 isformed over the dummy gate layer 64. The dummy gate layer 64 may bedeposited over the dummy dielectric layer 62 and then planarized, suchas by a CMP. The mask layer 66 may be deposited over the dummy gatelayer 64. The dummy gate layer 64 may be a conductive or non-conductivematerial and may be selected from a group including amorphous silicon,polycrystalline-silicon (polysilicon), poly-crystallinesilicon-germanium (poly-SiGe), metallic nitrides, metallic silicides,metallic oxides, and metals. The dummy gate layer 64 may be deposited byphysical vapor deposition (PVD), CVD, sputter deposition, or othertechniques for depositing the selected material. The dummy gate layer 64may be made of other materials that have a high etching selectivity fromthe etching of isolation regions, e.g., the STI regions 56 and/or thedummy dielectric layer 62. The mask layer 66 may include one or morelayers of, for example, silicon nitride, silicon oxynitride, or thelike. In this example, a single dummy gate layer 64 and a single masklayer 66 are formed across the n-type region 50N and the p-type region50P. In the illustrated embodiment, the dummy dielectric layer 62 coversthe STI regions 56, extending over the STI regions 56 and between thedummy gate layer 64 and the STI regions 56. In another embodiment, thedummy dielectric layer 62 covers only the fins 52.

In FIG. 4, the mask layer 66 may be patterned using acceptablephotolithography and etching techniques to form masks 76. The pattern ofthe masks 76 then may be transferred to the dummy gate layer 64 to formdummy gates 74. In some embodiments, the pattern of the masks 76 is alsotransferred to the dummy dielectric layer 62 by an acceptable etchingtechnique to form dummy dielectrics 72. The dummy gates 74 coverrespective channel regions 58 of the fins 52. The pattern of the masks76 may be used to physically separate each of the dummy gates 74 fromadjacent dummy gates 74. The dummy gates 74 may also have a lengthwisedirection substantially perpendicular to the lengthwise direction of thefins 52. The masks 76 may be removed during the patterning of the dummygate 74, or may be removed in subsequent processing.

FIGS. 5A through 19B illustrate various additional steps in themanufacturing of embodiment devices. FIGS. 5A through 19B illustratefeatures in either of the n-type region 50N and the p-type region 50P.For example, the structures illustrated may be applicable to both then-type region 50N and the p-type region 50P. Differences (if any) in thestructures of the n-type region 50N and the p-type region 50P aredescribed in the text accompanying each figure.

In FIGS. 5A and 5B, gate spacers 82, lightly doped source/drain (LDD)regions 86, epitaxial source/drain regions 88, a contact etch stop layer(CESL) 90, and a first ILD 92 are formed. The formation of thesefeatures will be subsequently described in greater detail for FIGS. 6Athrough 12B. The LDD regions 86 are formed in the fins 52. The gatespacers 82 are formed over the LDD regions 86, and on sidewalls of thedummy gates 74 and the masks 76 (if present). The epitaxial source/drainregions 88 are formed in the fins 52 such that each dummy gate 74 isdisposed between respective neighboring pairs of the epitaxialsource/drain regions 88. The epitaxial source/drain regions 88 includemultiple layers, such as liner layers 88A, main layers 88B, andfinishing layers 88C. In some embodiments, the gate spacers 82 are usedto separate the epitaxial source/drain regions 88 from the dummy gates74 by an appropriate lateral distance so that the epitaxial source/drainregions 88 do not short out subsequently formed gates of the resultingFinFETs. The CESL 90 may be deposited over the epitaxial source/drainregions 88, the gate spacers 82, the STI regions 56, and the masks 76(if present) or the dummy gates 74. The first ILD 92 is deposited overthe CESL 90.

FIGS. 6A through 12B illustrate various steps in the manufacturing ofembodiment devices. Specifically, the formation of the LDD regions 86,the gate spacers 82, the epitaxial source/drain regions 88, the CESL 90,and the first ILD 92 is illustrated. FIGS. 6A, 7A, 8A, 9A, 10A, 11A, and12A illustrate a first region 50A, in which one device is formed frommultiple fins 52. FIGS. 6B, 7B, 8B, 9B, 10B, 11B, and 12B illustrate asecond region 50B, which one device is formed from a single fin 52. Thefirst region 50A may be for forming a first type of devices (such aslogic devices) and the second region 50B may be for forming a secondtype of devices (such as memory devices). The regions 50A and 50B may beprocessed simultaneously, and are discussed together. It should beappreciated that each of the regions 50A, 50B can include fins 52 fromboth of the regions 50N and 50P of the substrate 50. In other words, thefirst region 50A and the second region 50B can each include n-typedevices and p-type devices.

In the first region 50A, the fins 52 may be formed in groups, with eachgroup of fins 52 being used to form a device. The fins 52 of a group maybe spaced apart from one another by a first spacing distance S₁, whichcan be in the range of about 10 nm to about 30 nm. The fins 52 of eachgroup may be spaced apart from the fins 52 of other groups by a secondspacing distance S₂, which can be in the range of about 20 nm to about50 nm. The second spacing distance S₂ is greater than the first spacingdistance S₁.

In FIGS. 6A and 6B, a spacer layer 96 is formed on exposed surfaces ofthe fins 52, the STI regions 56, and the masks 76 (if present) or thedummy gates 74 (see FIG. 5A). The spacer layer 96 may be formed of oneor more dielectric materials. Acceptable dielectric materials includeoxides such as silicon oxide or aluminum oxide; nitrides such as siliconnitride; carbides such as silicon carbide; the like; or combinationsthereof such as silicon oxynitride, silicon oxycarbide, siliconcarbonitride, silicon oxycarbonitride or the like; multilayers thereof;or the like. The dielectric materials may be formed by a conformaldeposition process such as chemical vapor deposition (CVD), plasmaenhanced chemical vapor deposition (PECVD), atomic layer deposition(ALD), or the like. In some embodiments, the spacer layer 96 includesmultiple layers of silicon oxycarbonitride (e.g., SiO_(x)N_(y)C_(1-x-y),where x and y can be in the range of 0 to 1). Each layer may have asimilar or different composition of silicon oxycarbonitride.

Before or after the formation of the spacer layer 96, implants may beperformed to form the LDD regions 86. In the embodiments with differentdevice types, similar to the implants for the wells previouslydiscussed, a mask, such as a photoresist, may be formed over the n-typeregion 50N, while exposing the p-type region 50P, and appropriate type(e.g., p-type) impurities may be implanted into the exposed fins 52 inthe p-type region 50P. The mask may then be removed. Subsequently, amask, such as a photoresist, may be formed over the p-type region 50Pwhile exposing the n-type region 50N, and appropriate type impurities(e.g., n-type) may be implanted into the exposed fins 52 in the n-typeregion 50N. The mask may then be removed. The n-type impurities may beany of the n-type impurities previously discussed, and the p-typeimpurities may be any of the p-type impurities previously discussed. TheLDD regions 86 may have a concentration of impurities in the range ofabout 10¹⁵ cm⁻³ to about 10¹⁹ cm⁻³. An anneal may be used to repairimplant damage and to activate the implanted impurities.

In FIGS. 7A and 7B, the spacer layer 96 is patterned to form fin spacers98 and also form the gate spacers 82 (see FIG. 5A). The fin spacers 98are formed on the sidewalls of the fins 52 and the top surfaces of theSTI regions 56. The gate spacers 82 (see FIG. 5A) are formed on thesidewalls of the dummy gates 74 and the top surfaces of the fins 52. Anacceptable etch process, such as a dry etch, a wet etch, the like, or acombination thereof, may be performed to pattern the spacer layer 96.The etching may be anisotropic. The gate spacers 82 are formed by thesame process for forming the fin spacers 98. For example, the spacerlayer 96, when etched, has first portions left on the sidewalls of thefins 52 (hence forming the fin spacers 98) and has second portions lefton the sidewalls of the dummy gates 74 (hence forming the gate spacers82). After etching, the gate spacers 82 and the fin spacers 98 can eachhave straight sidewalls (as illustrated) or can have curved sidewalls(not illustrated).

In some embodiments, dielectric layers (subsequently described ingreater detail for FIGS. 20A and 20B) are formed after the fin spacers98 are formed. The dielectric layers are disposed over the STI regions56 and between the fin spacers 98. The dielectric layers provideadditional separation of the features of adjacent devices.

The fin spacers 98 include inner fin spacers 98A and outer fin spacers98B. The inner fin spacers 98A are disposed between the fins 52 of asame device (e.g., between the fins 52 in the first region 50A).Specifically, the inner fin spacers 98A are disposed on sidewalls of thefins 52 of a same device that face towards one another, which may bereferred to as inner sidewalls 52S_(I) of the fins 52. The outer finspacers 98B are not disposed between the fins 52 of a same device.Specifically, the outer fin spacers 98B are disposed on sidewalls of thefins 52 of a same device that face away from one another, which may bereferred to as outer sidewalls 52S_(O) of the fins 52. As such, theouter fin spacers 98B are formed in both the first region 50A and thesecond region 50B, while the inner fin spacers 98A are formed in thefirst region 50A but not the second region 50B. Further, because thefins 52 of a same group are spaced apart from one another by a lesserspacing distance than the groups of fins 52, the adjacent inner finspacers 98A are spaced apart by a lesser spacing distance than theadjacent outer fin spacers 98B.

Source/drain recesses 100 are then patterned in the fins 52. In theillustrated embodiment, the source/drain recesses 100 extend into thefins 52, and through the LDD regions 86 (see FIG. 5A). The source/drainrecesses 100 may be patterned by any acceptable etch process. Thesource/drain recesses 100 may also extend into the substrate 50. In theillustrated embodiment, the source/drain recesses 100 are etched suchthat bottom surfaces of the source/drain recesses 100 are disposed abovethe top surfaces of the STI regions 56. The source/drain recesses 100may also be etched such that bottom surfaces of the source/drainrecesses 100 are disposed below the top surfaces of the STI regions 56.After the source/drain recesses 100 are patterned, the bottom surfacesof the source/drain recesses 100 are disposed below the top surfaces ofthe fin spacers 98. The source/drain recesses 100 may be formed byetching the fins 52 using an anisotropic etching processes, such as aRIE, a NBE, or the like. Referring back to FIG. 5A, the gate spacers 82,and the masks 76 (if present) or the dummy gates 74 are collectivelyused as an etching mask to cover portions of the fins 52 during theetching processes used to form the source/drain recesses 100.

As will be subsequently described in greater detail, source/drainregions will be epitaxially grown in the source/drain recesses 100. Thedepth D₁ of the source/drain recesses 100 determines the volume of thesource/drain regions. In some embodiments, the depth D₁ of thesource/drain recesses 100 is in the range of about 10 nm to about 50 nm,such as in the range of about 10 nm to about 30 nm. A timed etchingprocess may be used to stop the etching of the source/drain recesses 100after the source/drain recesses 100 reach a desired depth D₁. As will besubsequently described in greater detail, forming the source/drainrecesses 100 to such a depth D₁ allows source/drain regions of asufficient volume to be formed while reducing the risk of merging theadjacent epitaxial source/drain regions 88 of different devices.

In FIGS. 8A and 8B, the inner fin spacers 98A are recessed and the outerfin spacers 98B are removed. After the inner fin spacers 98A arerecessed, the bottom surfaces of the source/drain recesses 100 aredisposed above the top surfaces of the fin spacers 98. Recessing theinner fin spacers 98A and removing the outer fin spacers 98B exposes thesidewalls of the fins 52 that are below the source/drain recesses 100.As will be subsequently described in greater detail, source/drainregions will be epitaxially grown to extend along the sidewalls of thefins 52 that are below the source/drain recesses 100. The sidewalls ofthe fins 52 are <110> surfaces, and growing the source/drain regionsfrom such surfaces helps grow the source/drain regions to a greatervolume. The inner fin spacers 98A are not removed, and remain so thatthey may be used in subsequent processing to control epitaxial growth.Further, source/drain recesses 102 are patterned in the portions of theSTI regions 56 that were disposed beneath the outer fin spacers 98B. Thesource/drain recesses 102 expose additional portions of the sidewalls ofthe fins 52, thereby providing additional surfaces for epitaxial growthof the source/drain regions. The source/drain recesses 102 also provideadditional room in which the source/drain regions may be grown, therebyallowing the source/drain regions to be formed to a greater volume. Thedepth D₂ of the source/drain recesses 102 determines the volume of thesource/drain regions. In some embodiments, the depth D₂ of thesource/drain recesses 102 is in the range of about 0 nm to about 10 nm.As will be subsequently described in greater detail, forming thesource/drain recesses 102 to such a depth D₂ allows source/drain regionsof a sufficient volume to be formed without inducing short-channeleffects in the devices.

In some embodiments, the inner fin spacers 98A are recessed, the outerfin spacers 98B are removed, and the source/drain recesses 102 arepatterned by etching. The etching may be any acceptable etch process,such as a reactive ion etch (RIE), neutral beam etch (NBE), the like, ora combination thereof. The etch may be anisotropic. The etch isselective to the material of the fin spacers 98 and the STI regions 56(e.g., etches the materials of the fin spacers 98 and the STI regions 56at a faster rate than the material of the fins 52). The fin spacers 98and the gate spacers 82 (see FIG. 5A) are formed of the same material,and so the etch process may be performed with a mask (e.g., aphotoresist) that covers the gate spacers 82, so that the gate spacers82 remain substantially unremoved. In some embodiments, a single etchprocess is performed to accomplish the recessing of the inner finspacers 98A, the removal of the outer fin spacers 98B, and thepatterning of the source/drain recesses 102. The etch process canselectively etch the outer fin spacers 98B and the STI regions 56 at afaster rate than the inner fin spacers 98A. In some embodiments, theetch process is an anisotropic etch performed by a plasma process. Theplasma etching process is different from the etching process used toform the source/drain recesses 100.

The plasma etching process is performed in a processing chamber withprocess gas(es) being supplied into the processing chamber. In someembodiments, plasma generation power is pulsed between a low power(e.g., substantially zero watts) and a high power (which will besubsequently described in greater detail) during the plasma etchingprocess. In some embodiments, an applied bias voltage is also pulsedbetween a low voltage (e.g., substantially zero volts) and a highvoltage (which will be subsequently described in greater detail) duringthe plasma etching process. The plasma generation power and/or the biasvoltage may be pulsed as a rectangular wave or a square wave, althoughother pulse shapes maybe used. In some embodiments, the plasmageneration power and the bias voltage have synchronized pulses, suchthat the plasma generation power and the bias voltage are simultaneouslyin their respective low state or high state. In some embodiments, theplasma is a direct plasma. In some embodiments, the plasma is a remoteplasma that is generated in a separate plasma generation chamberconnected to the processing chamber. Process gas(es) can be activatedinto plasma by any suitable method of generating the plasma, such astransformer coupled plasma (TCP) systems, inductively coupled plasma(ICP) systems, capacitively coupled plasma (CCP) systems, magneticallyenhanced reactive ion techniques, electron cyclotron resonancetechniques, or the like.

The process gas(es) used in the plasma etching process include one ormore etchant gases. In embodiments where the fin spacers 98 are formedof silicon oxycarbonitride and the STI regions 56 are formed of siliconoxide, suitable examples of the etchant gases include CF₄, CF₂Cl₂, thelike, or combinations thereof. Additional process gas(es) such as oxygengas and/or hydrogen gas may also be used. Carrier gas(es), such as N₂,Ar, He, or the like, may be used to carry the process gas(es) into theprocessing chamber. The process gas(es) may be flowed into theprocessing chamber at a rate in the range of about 10 sccm to about 500sccm.

The plasma etching process may be performed using a bias voltage havinga high voltage in the range of about 300 volts to about 500 volts. Aswill be subsequently described in greater detail, the bias voltage islarge, which allows the etching of the fin spacers 98 to be bettercontrolled. The plasma etching process may be performed using a plasmageneration power having a high power in the range of about 50 watts toabout 200 watts. In some embodiments, the plasma generation power and/orthe bias voltage may be pulsed with a duty cycle in the range of about10% to about 90%, and may have a pulse frequency in the range of about10 kHz to about 50 kHz. The plasma etching process may be performed at atemperature in the range of about 25° C. to about 200° C. A pressure inthe processing chamber may be in the range of about 5 mTorr to about 50mTorr. The plasma etching process can be performed for a duration in therange of about 10 seconds to about 300 seconds.

As noted above, the plasma etching process is performed with a largebias voltage. The large bias voltage causes features in more crowdedareas to be etched at a slower rate than features in less crowded areas.As such, because the adjacent inner fin spacers 98A are spaced apart bya lesser spacing distance than the adjacent outer fin spacers 98B,performing the plasma etching process with a large bias voltage allowsthe plasma etching process to etch the outer fin spacers 98B at a fasterrate than the inner fin spacers 98A, even when the inner fin spacers 98Aand the outer fin spacers 98B are formed of the same material. Further,as noted above, the plasma etching process is selective to the materialof the fin spacers 98 and the STI regions 56. Thus, the plasma etchingprocess can be performed until the fin spacers 98 are recessed/removedand the source/drain recesses 102 are formed, while avoidingover-etching (e.g., removal) of the fins 52. A timed etching process maybe used to stop the etching of the source/drain recesses 102 after thesource/drain recesses 102 reach a desired depth D₂. Performing theplasma etching process with etching parameters (e.g., bias voltage,duration, etc) in the ranges discussed herein allows for the removal ofthe outer fin spacers 98B and the patterning of the source/drainrecesses 102 to the desired depth D₂ without over-etching of the innerfin spacers 98A or the fins 52. Performing the plasma etching processwith etching parameters (e.g., bias voltage, duration, etc) outside ofthe ranges discussed herein may not allow for the removal of the outerfin spacers 98B or the patterning of the source/drain recesses 102 tothe desired depth D₂ without over-etching of the inner fin spacers 98Aand the fins 52.

In FIGS. 9A and 9B, liner layers 88A of the epitaxial source/drainregions 88 (see FIG. 5A) are grown on the fins 52. As will besubsequently described in greater detail, the liner layers 88A may fillportions of the source/drain recesses 102. In the illustratedembodiment, the liner layers 88A are not grown on all exposed surfacesof the fins 52. For example, portions of the sidewalls of the fins 52 inthe source/drain recesses 102 may be free of the liner layers 88A. Inanother embodiment, the liner layers 88A grow on all exposed surfaces ofthe fins 52. Growing the liner layers 88A includes exposing the fins 52to several precursors. The precursors include one or more semiconductormaterial precursor(s), a dopant precursor, and an etching precursor. Thegrowth may be in an ambient such as hydrogen (H₂) or the like. In someembodiments, the fins 52 are simultaneously exposed to the semiconductormaterial precursor(s), the dopant precursor, and the etching precursor.In some embodiments, alternating growth and etch cycles are performed inwhich the fins 52 are exposed to the semiconductor material precursor(s)and the dopant precursor during growth cycles, and the fins 52 areexposed to the etching precursor during etch cycles.

The semiconductor material precursor(s) are any precursors for a desiredsemiconductor material. In embodiments where the epitaxial source/drainregions 88 are for n-type FinFETs, the precursors may be for asemiconductor material that can exert a tensile strain in the channelregions 58, such as silicon. For example, when the epitaxialsource/drain regions 88 are formed of silicon, the semiconductormaterial precursor(s) may include a silicon-containing gas such assilane (SiH₄), disilane (Si₂H₆) dicholorosilane (H₂SiCl₂), or the like.In embodiments where the epitaxial source/drain regions 88 are forp-type FinFETs, the precursors may be for a semiconductor material thatcan exert a compressive strain in the channel regions 58, such assilicon-germanium. For example, when the epitaxial source/drain regions88 are formed of silicon-germanium, the semiconductor materialprecursor(s) may include a germanium-containing gas such as germane(GeH₄), digermane (Ge₂H₆), or the like.

The dopant precursor is any precursor of an impurity having a desiredconductivity type that complements the semiconductor materialprecursor(s). For example, in an embodiment where the epitaxialsource/drain regions 88 are phosphorous-doped silicon (SiP) orarsenic-doped silicon (SiAs), such as when n-type devices are formed,the dopant precursor can be a phosphorous precursor such as phosphine(PH₃) or an arsenic precursor such as arsenic trichloride (AsCl₃),respectively. Likewise, in an embodiment where the epitaxialsource/drain regions 88 are boron-doped silicon-germanium (SiGeB), suchas when p-type devices are formed, the dopant precursor can be a boronprecursor such as diborane (B₂H₆).

The etching precursor controls epitaxial growth of the liner layers 88A.In particular, the etching precursor increases the growth selectivitysuch that the liner layers 88A grow in desired locations (e.g., on thefins 52), and do not grow in undesired locations (e.g., on the STIregions 56). In some embodiments, the etching precursor is hydrochloricacid (HCl). Performing etching during growth helps the liner layers 88Agrow conformally around the non-recessed portions of the fins 52. Insome embodiments, the liner layers 88A largely grow outwards from thesidewalls of the fins 52, while growing upwards in the source/drainrecesses 100 by a smaller amount. For example, the portions of the linerlayers 88A in the source/drain recesses 100 can have a first thicknessT₁ in the range of about 8 nm to about 10 nm, and the portions of theliner layers 88A on the sidewalls of the fins 52 can have a secondthickness T₂ in the range of about 8 nm to about 12 nm, with the secondthickness T₂ being greater than the first thickness T₁.

The liner layers 88A are formed with a low dopant concentration. Whenthe epitaxial source/drain regions 88 are formed of an alloysemiconductor (e.g., silicon-germanium), the liner layers 88A are alsoformed with a low concentration of the alloying agent (e.g., germanium).In an embodiment where the epitaxial source/drain regions 88 areboron-doped silicon-germanium (SiGeB), the liner layers 88A can have agermanium concentration in the range of about 10% to about 40%, and canhave a boron concentration in the range of about 5×10¹⁹ cm⁻³ to about5×10²⁰ cm⁻³. Forming the liner layers 88A with a low dopantconcentration may help them adhere better to the fins 52 and may helpavoid short-channel effects in the devices.

The inner fin spacers 98A block the epitaxial growth of the liner layers88A along the portions of the STI regions 56 between the fins 52 of asame device (e.g., between the fins 52 in the first region 50A).Further, the inner fin spacers 98A cover portions of the inner sidewallsof the fins 52, thereby providing less surfaces for epitaxial growthbetween the fins 52 of a same device. As a result, merging of the linerlayers 88A may be avoided, so that the liner layers 88A of a same deviceremain separated after growth. For example, the liner layers 88A of asame device (e.g., in the first region 50A) can remain separated by adistance D₃, which can be in the range of about 1 nm to about 5 nm.Because the inner fin spacers 98A are formed in the first region 50A butnot the second region 50B, growth of the liner layers 88A may occurasymmetrically around the fins 52 in the first region 50A, and may occursymmetrically around the fins 52 in the second region 50B.

In FIGS. 10A and 10B, main layers 88B of the epitaxial source/drainregions 88 (see FIG. 5A) are grown on the liner layers 88A. As will besubsequently described in greater detail, the main layers 88B may fillportions of the source/drain recesses 102. Growing the main layers 88Bincludes exposing the liner layers 88A to several precursors. Theprecursors used for growing the main layers 88B may be selected from thesame candidate precursors as those used for growing the liner layers88A. The precursors used to grow the liner layers 88A and the mainlayers 88B may be the same precursors, or may include differentprecursors. The growth may be in an ambient such as hydrogen (H₂) or thelike.

The main layers 88B are formed with a greater dopant concentration thanthe liner layers 88A. When the epitaxial source/drain regions 88 areformed of an alloy semiconductor (e.g., silicon-germanium), the mainlayers 88B are also formed with a greater concentration of the alloyingagent (e.g., germanium) than the liner layers 88A. In an embodimentwhere the epitaxial source/drain regions 88 are boron-dopedsilicon-germanium (SiGeB), the main layers 88B can have a germaniumconcentration in the range of about 35% to about 65%, and can have aboron concentration in the range of about 5×10²⁰ cm⁻³ to about 3×10²¹cm⁻³. Forming the main layers 88B with a high dopant concentration mayallow the epitaxial source/drain regions 88 to have reduced contactresistance and generate more strain (e.g., compressive or tensilestrain) in the channel regions 58.

As noted above, etching is performed during the epitaxial growth.Performing etching during growth causes the growth to be directional sothat <111> surfaces are formed for the main layers 88B. As a result,upper surfaces of the main layers 88B have facets which expand laterallyoutward beyond sidewalls of the fins 52. These facets cause adjacentepitaxial source/drain regions 88 of a same device to merge, such as inthe first region 50A (as illustrated by FIG. 10A). Conversely, fordevices that have a single fin 52, adjacent epitaxial source/drainregions 88 remain separated after the epitaxy process is completed, suchas in the second region 50B (as illustrated by FIG. 10B). Less etchingmay be performed during growth of the main layers 88B than during growthof the liner layers 88A. For example, the etching precursor may bedispensed at a lesser flow rate during growth of the main layers 88Bthan during growth of the liner layers 88A. As a result, the main layers88B grow upwards in the source/drain recesses 100 more than they growoutwards. The main layers 88B may fill a majority or even all of thesource/drain recesses 100. Growing the main layers 88B in an upwardsdirection can help reduce the risk of undesirable merging the adjacentepitaxial source/drain regions 88 of different devices.

In FIGS. 11A and 11B, finishing layers 88C of the epitaxial source/drainregions 88 (see FIG. 5A) are grown on the main layers 88B. The finishinglayers 88C fill the remainder of (and may overfill) the source/drainrecesses 100 and the source/drain recesses 102. Growing the finishinglayers 88C includes exposing the main layers 88B to several precursors.The precursors used for growing the finishing layers 88C may be selectedfrom the same candidate precursors as those used for growing the linerlayers 88A. The precursors used to grow the liner layers 88A, the mainlayers 88B, and the finishing layers 88C may be the same precursors, ormay include different precursors. The growth may be in an ambient suchas hydrogen (H₂) or the like.

The finishing layers 88C are formed with a greater dopant concentrationthan the liner layers 88A and a lesser dopant concentration than themain layers 88B. When the epitaxial source/drain regions 88 are formedof an alloy semiconductor (e.g., silicon-germanium), the finishinglayers 88C are also formed with a greater concentration of the alloyingagent (e.g., germanium) than the liner layers 88A and a lesserconcentration of the alloying agent than the main layers 88B. In anembodiment where the epitaxial source/drain regions 88 are boron-dopedsilicon-germanium (SiGeB), the finishing layers 88C can have a germaniumconcentration in the range of about 35% to about 55%, and can have aboron concentration in the range of about 5×10²⁰ cm⁻³ to about 1×10²¹cm⁻³. Forming the finishing layers 88C with a dopant concentration thatis less than the main layers 88B may help reduce the diffusion ofdopants out of the main layers 88B.

After formation, the epitaxial source/drain regions 88 fill thesource/drain recesses 100, extend along the sidewalls of the fins 52,and fill the source/drain recesses 102. Referring back to FIG. 5A, lessroom is available for source/drain regions between the dummy gates 74 asdevice sizes scale down. By forming the source/drain recesses 102 andallowing the epitaxial source/drain regions 88 to grow in thesource/drain recesses 102, the epitaxial source/drain regions 88 canhave a greater volume even when the distance between the dummy gates 74is small. The epitaxial source/drain regions 88 can thus be formed to agreater volume without the risk of merging the epitaxial source/drainregions 88 of adjacent devices.

In the illustrated embodiment, the liner layers 88A, the main layers88B, and the finishing layers 88C each fill portions of the source/drainrecesses 102. Specifically, each of the layers of the epitaxialsource/drain regions 88 (e.g., the liner layers 88A, the main layers88B, and the finishing layers 88C) are grown in the source/drainrecesses 100 and the source/drain recesses 102. As such, the linerlayers 88A, the main layers 88B, and the finishing layers 88C eachextend beneath the top surfaces of the STI regions 56.

In another embodiment, the liner layers 88A and the main layers 88B eachfill portions of the source/drain recesses 102, but the finishing layers88C do not fill the source/drain recesses 102. Specifically, each of thelayers of the epitaxial source/drain regions 88 (e.g., the liner layers88A, the main layers 88B, and the finishing layers 88C) are grown in thesource/drain recesses 100, but only a subset of the layers of theepitaxial source/drain regions 88 (e.g., the liner layers 88A and themain layers 88B) are grown in the source/drain recesses 102. As such,the liner layers 88A and the main layers 88B each extend beneath the topsurfaces of the STI regions 56, but the finishing layers 88C aredisposed over the top surfaces of the STI regions 56.

In yet another embodiment, the liner layers 88A fill all of thesource/drain recesses 102, but the main layers 88B and the finishinglayers 88C do not fill the source/drain recesses 102. Specifically, eachof the layers of the epitaxial source/drain regions 88 (e.g., the linerlayers 88A, the main layers 88B, and the finishing layers 88C) are grownin the source/drain recesses 100, but only a subset of the layers of theepitaxial source/drain regions 88 (e.g., the liner layers 88A) are grownin the source/drain recesses 102. As such, the liner layers 88A extendbeneath the top surfaces of the STI regions 56, but the main layers 88Band the finishing layers 88C are each disposed over the top surfaces ofthe STI regions 56.

The fins 52 (including the portions in which the source/drain recesses100 are formed) have an overall height H₁, which can be in the range ofabout 40 nm to about 100 nm. The epitaxial source/drain regions 88 havean overall height H₂, which can be in the range of about 50 nm to about120 nm. The height H₂ is greater than the height H₁, such that theepitaxial source/drain regions 88 are raised above the top surfaces ofthe fins 52 by a height H₃, which can be in the range of about 5 nm toabout 30 nm.

The epitaxial source/drain regions 88 have main portions 88M in thesource/drain recesses 100 (see FIGS. 10A and 10B). The main portions 88Mof the epitaxial source/drain regions 88 have a height which is similarto the depth D₁ of the source/drain recesses 100. The depth D₁ of thesource/drain recesses 100 can be from about 30% to about 80% of theheight H₁, such as from about 20% to about 50% of the height H₁. Formingthe source/drain recesses 100 with a depth D₁ in this range allows theepitaxial source/drain regions 88 to have sufficient volume (therebyproviding enough carriers for the resulting devices), and also allowsthe epitaxial source/drain regions 88 to be formed with convex topsurfaces (thereby allowing the regions to have reduced contactresistance). When the source/drain recesses 100 have a depth D₁ that isless than about 30% of the height H₁, the epitaxial source/drain regions88 may not have sufficient volume. When the source/drain recesses 100have a depth D₁ that is greater than about 80% of the height H₁, theepitaxial source/drain regions 88 may have top surfaces with othershapes, may be formed to have too great of a width, and too much loss ofthe fins 52 may occur. When the epitaxial source/drain regions 88 havetoo great of a width, undesirable merging of the adjacent epitaxialsource/drain regions 88 of different devices may occur. When too muchloss of the fins 52 occurs, an insufficient amount of strain may begenerated in the channel regions 58.

The epitaxial source/drain regions 88 have projecting portions 88P inthe source/drain recesses 102 (see FIGS. 10A and 10B). The projectingportions 88P extend into (e.g., beneath the top surfaces of) the STIregions 56, and are disposed on the outer sidewalls of the fins 52.Forming the epitaxial source/drain regions 88 with the projectingportions 88P can reduce the room required for source/drain regionsbetween the dummy gates 74 by up to about 30%. The projecting portions88P of the epitaxial source/drain regions 88 have a height H₄, which canbe in the range of about 3 nm to about 20 nm, such as in the range ofabout 5 nm to about 15 nm. The height H₄ of the projecting portions 88Pis less than the height of the main portions 88M. The height H₄ can befrom about 10% to about 20% of the height H₂. Forming the projectingportions 88P with a height H₄ in this range allows the epitaxialsource/drain regions 88 to have sufficient volume (thereby providingenough carriers for the resulting devices), and also allows theepitaxial source/drain regions 88 to be formed with convex top surfaces(thereby allowing the regions to have reduced contact resistance). Whenthe projecting portions 88P have a height H₄ that is less than about 10%of the height H₂, the epitaxial source/drain regions 88 may not havesufficient volume and/or may have top surfaces with other shapes. Whenthe projecting portions 88P have a height H₄ that greater than about 20%of the height H₂, diffusion of dopants out of the epitaxial source/drainregions 88 may occur, which may induce short-channel effects in theresulting devices.

The inner fin spacers 98A have a height H₅, which can be in the range ofabout 3 nm to about 30 nm. The portions of the inner sidewalls of thefins 52 that are exposed by the inner fin spacers 98A have a height H₆,which can be in the range of about 30 nm to about 80 nm. The height H₅can be from about 20% to about 40% of the height H₁, and the height H₆can be from about 40% to about 70% of the height H₁. Forming the innerfin spacers 98A with a height H₅ in this range allows the epitaxialsource/drain regions 88 to have sufficient volume (thereby providingenough carriers for the resulting devices), and also allows theepitaxial source/drain regions 88 to be formed with convex top surfaces(thereby allowing the regions to have reduced contact resistance). Whenthe inner fin spacers 98A have a height H₅ that is less than about 20%of the height H₁, the epitaxial source/drain regions 88 may have topsurfaces with other shapes, and may be formed to have too great of awidth. When the inner fin spacers 98A have a height H₅ that is greaterthan about 40% of the height H₁, the epitaxial source/drain regions 88may not have sufficient volume.

As noted above, the inner fin spacers 98A cover portions of the innersidewalls of the fins 52. As a result, the epitaxial source/drainregions 88 cover more surface area of the outer sidewalls of the fins 52than the inner sidewalls of the fins 52. More specifically, theepitaxial source/drain regions 88 extend along the inner sidewalls ofthe fins 52 a first distance (corresponding to the height H₆), and theepitaxial source/drain regions 88 extend along the outer sidewalls ofthe fins 52 by a second distance (corresponding to the sum of the heightH₄, the height H₅, and the height H₆), with the first distance beingless than the second distance.

In FIGS. 12A and 12B, the first ILD 92 is deposited over the epitaxialsource/drain regions 88, the gate spacers 82, the STI regions 56, andthe masks 76 (if present) or the dummy gates 74 (see FIG. 5A). The firstILD 92 may be formed of a dielectric material, and may be deposited byany suitable method, such as CVD, plasma-enhanced CVD (PECVD), or FCVD.Acceptable dielectric materials may include phospho-silicate glass(PSG), boro-silicate glass (BSG), boron-doped phospho-silicate glass(BPSG), undoped silicate glass (USG), or the like. Other insulationmaterials formed by any acceptable process may be used

In some embodiments, a CESL 90 is formed between the first ILD 92 andthe epitaxial source/drain regions 88, the gate spacers 82, the STIregions 56, and the masks 76 (if present) or the dummy gates 74 (seeFIG. 5A). The CESL 90 may comprise a dielectric material, such as,silicon nitride, silicon oxide, silicon oxynitride, or the like, havinga lower etch rate than the material of the first ILD 92.

In FIGS. 13A and 13B, a planarization process, such as a CMP, may beperformed to level the top surface of the first ILD 92 with the topsurfaces of the masks 76 (if present) or the dummy gates 74. Theplanarization process may also remove the masks 76 on the dummy gates74, and portions of the gate spacers 82 along sidewalls of the masks 76.After the planarization process, the top surfaces of the dummy gates 74,the gate spacers 82, and the first ILD 92 are coplanar (within processvariations). Accordingly, the top surfaces of the dummy gates 74 areexposed through the first ILD 92. In some embodiments, the masks 76 mayremain, in which case the planarization process levels the top surfaceof the first ILD 92 with the top surfaces of the masks 76.

In FIGS. 14A and 14B, the masks 76 (if present) and the dummy gates 74are removed in one or more etching step(s), so that recesses 110 areformed. Portions of the dummy dielectrics 72 in the recesses 110 mayalso be removed. In some embodiments, only the dummy gates 74 areremoved and the dummy dielectrics 72 remain and are exposed by therecesses 110. In some embodiments, the dummy dielectrics 72 are removedfrom recesses 110 in a first region of a die (e.g., a core logic region)and remain in recesses 110 in a second region of the die (e.g., aninput/output region). In some embodiments, the dummy gates 74 areremoved by an anisotropic dry etch process. For example, the etchingprocess may include a dry etch process using reaction gas(es) thatselectively etch the dummy gates 74 at a faster rate than the first ILD92 or the gate spacers 82. Each recess 110 exposes and/or overlies achannel region 58 of a respective fin 52. During the removal, the dummydielectrics 72 may be used as etch stop layers when the dummy gates 74are etched. The dummy dielectrics 72 may then be optionally removedafter the removal of the dummy gates 74.

In FIGS. 15A and 15B, gate dielectrics 112 and gate electrodes 114 areformed for replacement gates. The gate dielectrics 112 include one ormore layers deposited in the recesses 110, such as on the top surfacesand the sidewalls of the fins 52 and on sidewalls of the gate spacers82. In some embodiments, the gate dielectrics 112 comprise one or moredielectric layers, such as one or more layers of silicon oxide, siliconnitride, metal oxide, metal silicate, or the like. For example, in someembodiments, the gate dielectrics 112 include an interfacial layer ofsilicon oxide formed by thermal or chemical oxidation and an overlyinghigh-k dielectric material, such as a metal oxide or a silicate ofhafnium, aluminum, zirconium, lanthanum, manganese, barium, titanium,lead, and combinations thereof. The gate dielectrics 112 may include adielectric layer having a k-value greater than about 7.0. The formationmethods of the gate dielectrics 112 may include Molecular-BeamDeposition (MBD), ALD, PECVD, and the like. In embodiments whereportions of the dummy dielectrics 72 remain in the recesses 110, thegate dielectrics 112 include a material of the dummy dielectrics 72(e.g., silicon oxide).

The gate electrodes 114 are deposited over the gate dielectrics 112,respectively, and fill the remaining portions of the recesses 110. Thegate electrodes 114 may include a metal-containing material such astitanium nitride, titanium oxide, tantalum nitride, tantalum carbide,cobalt, ruthenium, aluminum, tungsten, combinations thereof, ormulti-layers thereof. For example, although single layered gateelectrodes 114 are illustrated, the gate electrodes 114 may include anynumber of liner layers, any number of work function tuning layers, and afill material. After the filling of the recesses 110, a planarizationprocess, such as a CMP, may be performed to remove the excess portionsof the materials of the gate dielectrics 112 and the gate electrodes114, which excess portions are over the top surfaces of the first ILD92. The top surfaces of the gate spacers 82, the first ILD 92, the gatedielectrics 112, and the gate electrodes 114 are thus coplanar (withinprocess variations). The remaining portions of the materials of the gatedielectrics 112 and the gate electrodes 114 thus form replacement gatesof the resulting FinFETs. The gate dielectrics 112 and the gateelectrodes 114 may each be collectively referred to as a “gatestructure.” The gate structures each extend along sidewalls of a channelregion 58 of the fins 52.

The formation of the gate dielectrics 112 in the n-type region 50N andthe p-type region 50P may occur simultaneously such that the gatedielectrics 112 in each region are formed of the same materials, and theformation of the gate electrodes 114 may occur simultaneously such thatthe gate electrodes 114 in each region are formed of the same materials.In some embodiments, the gate dielectrics 112 in each region may beformed by distinct processes, such that the gate dielectrics 112 may bedifferent materials, and/or the gate electrodes 114 in each region maybe formed by distinct processes, such that the gate electrodes 114 maybe different materials. Various masking steps may be used to mask andexpose appropriate regions when using distinct processes.

In FIGS. 16A and 16B, a second ILD 118 is deposited over the gatespacers 82, the first ILD 92, the gate dielectrics 112, and the gateelectrodes 114. In some embodiments, the second ILD 118 is a flowablefilm formed by a flowable CVD method. In some embodiments, the secondILD 118 is formed of a dielectric material such as PSG, BSG, BPSG, USG,or the like, and may be deposited by any suitable method, such as CVDand PECVD

In some embodiments, an etch stop layer (ESL) 116 is formed between thesecond ILD 118 and the gate spacers 82, the first ILD 92, the gatedielectrics 112, and the gate electrodes 114. The ESL 116 may comprise adielectric material, such as, silicon nitride, silicon oxide, siliconoxynitride, or the like, having a lower etch rate than the material ofthe second ILD 118.

In FIGS. 17A and 17B, gate contacts 120 and source/drain contacts 122are formed to contact, respectively, the gate electrodes 114 and theepitaxial source/drain regions 88. The gate contacts 120 are physicallyand electrically coupled to the gate electrodes 114, and thesource/drain contacts 122 are physically and electrically coupled to theepitaxial source/drain regions 88.

As an example to form the gate contacts 120, openings for the gatecontacts 120 are formed through the second ILD 118 and the ESL 116. Theopenings may be formed using acceptable photolithography and etchingtechniques. A liner (not shown), such as a diffusion barrier layer, anadhesion layer, or the like, and a conductive material are formed in theopenings. The liner may include titanium, titanium nitride, tantalum,tantalum nitride, or the like. The conductive material may be copper, acopper alloy, silver, gold, tungsten, cobalt, aluminum, nickel, or thelike. A planarization process, such as a CMP, may be performed to removeexcess material from a surface of the second ILD 118. The remainingliner and conductive material form the gate contacts 120 in theopenings.

FIGS. 18A through 19B illustrate various steps in the manufacturing ofembodiment devices. Specifically, the formation of the source/draincontacts 122 is illustrated. FIGS. 18A and 19A illustrate a first region50A and FIGS. 18B and 19B illustrate a second region 50B, in a similarmanner as FIGS. 6A through 12B.

In FIGS. 18A and 18B, openings 124 for the source/drain contacts 122 areformed through the second ILD 118, the ESL 116, the first ILD 92, andthe CESL 90. The openings 124 may be formed using acceptablephotolithography and etching techniques. The openings 124 are alsoformed through the finishing layers 88C of the epitaxial source/drainregions 88, and may extend into the main layers 88B of the epitaxialsource/drain regions 88. More specifically, the openings 124 extend intothe source/drain recesses 100, and below the top surfaces of the fins52. For example, the openings 124 can extend into the epitaxialsource/drain regions 88 by a depth in the range of about 5 nm to about10 nm.

In FIGS. 19A and 19B, the source/drain contacts 122 are formed in theopenings 124. A liner (not shown), such as a diffusion barrier layer, anadhesion layer, or the like, and a conductive material are formed in theopenings 124. The liner may include titanium, titanium nitride,tantalum, tantalum nitride, or the like. The conductive material may becopper, a copper alloy, silver, gold, tungsten, cobalt, aluminum,nickel, or the like. A planarization process, such as a CMP, may beperformed to remove excess material from a surface of the second ILD118. The remaining liner and conductive material form the source/draincontacts 122 in the openings 124.

Optionally, metal-semiconductor alloy regions 126 are formed at theinterface between the epitaxial source/drain regions 88 and thesource/drain contacts 122. The metal-semiconductor alloy regions 126 canbe silicide regions formed of a metal silicide (e.g., titanium silicide,cobalt silicide, nickel silicide, etc.), germanide regions formed of ametal germanide (e.g. titanium germanide, cobalt germanide, nickelgermanide, etc.), silicon-germanide regions formed of both a metalsilicide and a metal germanide, or the like. The metal-semiconductoralloy regions 126 can be formed before the source/drain contacts 122 bydepositing a metal in the openings 124 and then performing a thermalanneal process. The metal can be any metal capable of reacting with thesemiconductor materials (e.g., silicon, silicon-germanium, germanium,etc.) of the epitaxial source/drain regions 88 to form a low-resistancemetal-semiconductor alloy, such as nickel, cobalt, titanium, tantalum,platinum, tungsten, other noble metals, other refractory metals, rareearth metals or their alloys. The metal can be deposited by a depositionprocess such as ALD, CVD, PVD, or the like, and can be deposited to athickness in the range of about 1 nm to about 10 nm. Impurities can beimplanted in the metal to accelerate formation of themetal-semiconductor alloy regions 126 during the thermal anneal process.The impurities can also help activate the p-type and/or n-typeimpurities in the epitaxial source/drain regions 88 during the thermalanneal process, helping reduce the contact resistance to the resultingdevices. For example, a semiconductor impurity such as germanium may beimplanted in the metal. In an embodiment, the metal-semiconductor alloyregions 126 are silicide regions formed of germanium-dopedtitanium-silicon. After the thermal anneal process, a cleaning process,such as a wet clean, may be performed to remove any residual metal fromthe openings 124, such as from surfaces of the metal-semiconductor alloyregions 126. The source/drain contacts 122 can then be formed in theremaining portions of the openings 124 and on the metal-semiconductoralloy regions 126.

Although they are described as being formed in separate processes, thegate contacts 120 and the source/drain contacts 122 may also be formedin the same process. For example, openings for the gate contacts 120 andthe source/drain contacts 122 may be formed together, and then filled bythe deposition process(es) used to form the material(s) of the gatecontacts 120 and the source/drain contacts 122. Further, although shownas being formed in the same cross-sections (see FIG. 5A), it should beappreciated that each of the gate contacts 120 and the source/draincontacts 122 may be formed in different cross-sections, which may avoidshorting of the contacts.

FIGS. 20A and 20B are views of FinFETs, in accordance with some otherembodiments. This embodiment is similar to the embodiment of FIGS. 19Aand 19B, except dielectric layers 128 are disposed over the STI regions56 and between the fin spacers 98. The dielectric layers 128 may beformed of an oxide such as silicon oxide, a nitride such as siliconnitride, the like, or a combination thereof, which may be deposited byCVD, ALD, or the like. As an example to form the dielectric layers 128,a dielectric material may be deposited after the fin spacers 98 arepatterned. The dielectric material may then be recessed so that theremaining portions of the dielectric material are disposed between thefin spacers 98. The dielectric material may be recessed by anyacceptable etch process. The dielectric material, when etched, hasportions left on the top surfaces of the STI regions 56 (hence formingthe dielectric layers 128). In some embodiments, the dielectric layers128 are formed of a similar material as the STI regions 56, but may beformed by a different process than the material of the STI regions 56.For example, the dielectric layers 128 may include silicon oxide formedby CVD, which allows for deposition of a higher quality film than FCVD.The dielectric layers 128 can thus provide additional separation of thefeatures of adjacent devices.

The disclosed FinFET embodiments could also be applied to nanostructuredevices such as nanostructure (e.g., nanosheet, nanowire,gate-all-around, or the like) field effect transistors (NSFETs). In anNSFET embodiment, the fins are replaced by nanostructures formed bypatterning a stack of alternating layers of channel layers andsacrificial layers. Dummy gate structures and source/drain regions areformed in a manner similar to the above-described embodiments. After thedummy gate structures are removed, the sacrificial layers can bepartially or fully removed in channel regions. The replacement gatestructures are formed in a manner similar to the above-describedembodiments, the replacement gate structures may partially or completelyfill openings left by removing the sacrificial layers, and thereplacement gate structures may partially or completely surround thechannel layers in the channel regions of the NSFET devices. ILDs andcontacts to the replacement gate structures and the source/drain regionsmay be formed in a manner similar to the above-described embodiments. Ananostructure device can be formed as disclosed in U.S. PatentApplication Publication No. 2016/0365414, which is incorporated hereinby reference in its entirety.

Embodiments may achieve advantages. Forming the source/drain recesses102 in the STI regions 56 and growing the epitaxial source/drain regions88 in the source/drain recesses 102 allows the epitaxial source/drainregions 88 to be formed to a greater volume than epitaxial source/drainregions that are not grown in the source/drain recesses 102.Specifically, the source/drain recesses 102 provide additional room inwhich the epitaxial source/drain regions 88 may be grown. Further,forming the epitaxial source/drain regions 88 in the source/drainrecesses 102 allows the source/drain recesses 100 to be formed to alesser depth D₁, thereby reducing loss of the fins 52 duringsource/drain formation. When less loss of the fins 52 occurs, a greateramount of strain may be generated in the channel regions 58 by theepitaxial source/drain regions 88.

An embodiment device includes: an isolation region on a substrate; afirst fin extending above a top surface of the isolation region; a gatestructure on the first fin; and an epitaxial source/drain regionadjacent the gate structure, the epitaxial source/drain region having afirst main portion and a first projecting portion, the first mainportion disposed in the first fin, the first projecting portion disposedon a first sidewall of the first fin and beneath the top surface of theisolation region. In some embodiments of the device, a height of thefirst main portion of the epitaxial source/drain region is from 30% to80% of an overall height of the first fin. In some embodiments of thedevice, a height of the first projecting portion of the epitaxialsource/drain region is from 10% to 20% of an overall height of theepitaxial source/drain region. In some embodiments of the device, theepitaxial source/drain region includes: a liner layer on the first fin,the liner layer including boron-doped silicon-germanium having a firstgermanium concentration and a first boron concentration; a main layer onthe liner layer, the main layer including boron-doped silicon-germaniumhaving a second germanium concentration and a second boronconcentration; and a finishing layer on the main layer, the finishinglayer including boron-doped silicon-germanium having a third germaniumconcentration and a third boron concentration, the third germaniumconcentration less than the second germanium concentration and greaterthan the first germanium concentration, the third boron concentrationless than the second boron concentration and greater than the firstboron concentration. In some embodiments of the device, the liner layerextends beneath the top surface of the isolation region, and the mainlayer and the finishing layer are disposed over the top surface of theisolation region. In some embodiments of the device, the liner layer andthe main layer extend beneath the top surface of the isolation region,and the finishing layer is disposed over the top surface of theisolation region. In some embodiments of the device, the liner layer,the main layer, and the finishing layer extend beneath the top surfaceof the isolation region. In some embodiments, the device furtherincludes: a second fin extending above the top surface of the isolationregion, where the gate structure is on the second fin, and where theepitaxial source/drain region further has a second main portion and asecond projecting portion, the second main portion disposed in thesecond fin, the second projecting portion disposed on a second sidewallof the second fin and beneath the top surface of the isolation region,the first sidewall of the first fin and the second sidewall of thesecond fin facing away from one another.

An embodiment device includes: an isolation region on a substrate; afirst fin extending above a top surface of the isolation region, thefirst fin having a first inner sidewall and a first outer sidewall; asecond fin extending above the top surface of the isolation region, thesecond fin having a second inner sidewall and a second outer sidewall,the first inner sidewall and the second inner sidewall facing oneanother; and an epitaxial source/drain region in the first fin and thesecond fin, the epitaxial source/drain region extending a first distancealong the first inner sidewall and the second inner sidewall, theepitaxial source/drain region extending a second distance along thefirst outer sidewall and the second outer sidewall, the first distanceless than the second distance. In some embodiments, the device furtherincludes: a first fin spacer disposed on the first inner sidewall of thefirst fin; and a second fin spacer disposed on the second inner sidewallof the second fin. In some embodiments of the device, the epitaxialsource/drain region extends beneath the top surface of the isolationregion. In some embodiments of the device, the epitaxial source/drainregion has a convex top surface.

An embodiment method includes: depositing a spacer layer on fins, thefins extending from an isolation region; patterning the spacer layer toform inner fin spacers and outer fin spacers, the inner fin spacersdisposed on inner sidewalls of the fins, the outer fin spacers disposedon outer sidewalls of the fins; patterning first source/drain recessesin the fins; after patterning the first source/drain recesses,performing a plasma etching process to recess the inner fin spacers,remove the outer fin spacers, and form second source/drain recesses inthe isolation region beneath the outer fin spacers; and growing anepitaxial source/drain region in the first source/drain recesses and thesecond source/drain recesses. In some embodiments of the method, theplasma etching process etches the outer fin spacers at a faster ratethan the inner fin spacers. In some embodiments of the method, thespacer layer is formed of silicon oxycarbonitride, and the plasmaetching process is an anisotropic etch performed with CF4 at biasvoltage in a range of 300 volts to 500 volts. In some embodiments of themethod, a depth of the first source/drain recesses is from 30% to 80% ofan overall height of the fins. In some embodiments of the method, adepth of the second source/drain recesses is from 10% to 20% of anoverall height of the epitaxial source/drain region. In some embodimentsof the method, growing the epitaxial source/drain region includesgrowing a plurality of layers, each of the layers grown in the firstsource/drain recesses, a subset of the layers grown in the secondsource/drain recesses. In some embodiments of the method, growing theepitaxial source/drain region includes growing a plurality of layers,each of the layers grown in the first source/drain recesses, each of thelayers grown in the second source/drain recesses. In some embodiments ofthe method, portions of the epitaxial source/drain region between thefins are separated from the isolation region by the inner fin spacers.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A device comprising: an isolation region on a substrate; a first fin extending above a top surface of the isolation region; a gate structure on the first fin; and an epitaxial source/drain region adjacent the gate structure, the epitaxial source/drain region having a first main portion and a first projecting portion, the first main portion disposed in the first fin, the first projecting portion disposed on a first sidewall of the first fin and beneath the top surface of the isolation region.
 2. The device of claim 1, wherein a height of the first main portion of the epitaxial source/drain region is from 30% to 80% of an overall height of the first fin.
 3. The device of claim 1, wherein a height of the first projecting portion of the epitaxial source/drain region is from 10% to 20% of an overall height of the epitaxial source/drain region.
 4. The device of claim 1, wherein the epitaxial source/drain region comprises: a liner layer on the first fin, the liner layer comprising boron-doped silicon-germanium having a first germanium concentration and a first boron concentration; a main layer on the liner layer, the main layer comprising boron-doped silicon-germanium having a second germanium concentration and a second boron concentration; and a finishing layer on the main layer, the finishing layer comprising boron-doped silicon-germanium having a third germanium concentration and a third boron concentration, the third germanium concentration less than the second germanium concentration and greater than the first germanium concentration, the third boron concentration less than the second boron concentration and greater than the first boron concentration.
 5. The device of claim 4, wherein the liner layer extends beneath the top surface of the isolation region, and wherein the main layer and the finishing layer are disposed over the top surface of the isolation region.
 6. The device of claim 4, wherein the liner layer and the main layer extend beneath the top surface of the isolation region, and wherein the finishing layer is disposed over the top surface of the isolation region.
 7. The device of claim 4, wherein the liner layer, the main layer, and the finishing layer extend beneath the top surface of the isolation region.
 8. The device of claim 1 further comprising: a second fin extending above the top surface of the isolation region, wherein the gate structure is on the second fin, and wherein the epitaxial source/drain region further has a second main portion and a second projecting portion, the second main portion disposed in the second fin, the second projecting portion disposed on a second sidewall of the second fin and beneath the top surface of the isolation region, the first sidewall of the first fin and the second sidewall of the second fin facing away from one another.
 9. A device comprising: an isolation region on a substrate; a first fin extending above a top surface of the isolation region, the first fin having a first inner sidewall and a first outer sidewall; a second fin extending above the top surface of the isolation region, the second fin having a second inner sidewall and a second outer sidewall, the first inner sidewall and the second inner sidewall facing one another; and an epitaxial source/drain region in the first fin and the second fin, the epitaxial source/drain region extending a first distance along the first inner sidewall and the second inner sidewall, the epitaxial source/drain region extending a second distance along the first outer sidewall and the second outer sidewall, the first distance less than the second distance.
 10. The device of claim 9 further comprising: a first fin spacer disposed on the first inner sidewall of the first fin; and a second fin spacer disposed on the second inner sidewall of the second fin.
 11. The device of claim 9, wherein the epitaxial source/drain region extends beneath the top surface of the isolation region.
 12. The device of claim 9, wherein the epitaxial source/drain region has a convex top surface.
 13. A method comprising: depositing a spacer layer on fins, the fins extending from an isolation region; patterning the spacer layer to form inner fin spacers and outer fin spacers, the inner fin spacers disposed on inner sidewalls of the fins, the outer fin spacers disposed on outer sidewalls of the fins; patterning first source/drain recesses in the fins; after patterning the first source/drain recesses, performing a plasma etching process to recess the inner fin spacers, remove the outer fin spacers, and form second source/drain recesses in the isolation region beneath the outer fin spacers; and growing an epitaxial source/drain region in the first source/drain recesses and the second source/drain recesses.
 14. The method of claim 13, wherein the plasma etching process etches the outer fin spacers at a faster rate than the inner fin spacers.
 15. The method of claim 14, wherein the spacer layer is formed of silicon oxycarbonitride, and the plasma etching process is an anisotropic etch performed with CF₄ at bias voltage in a range of 300 volts to 500 volts.
 16. The method of claim 13, wherein a depth of the first source/drain recesses is from 30% to 80% of an overall height of the fins.
 17. The method of claim 13, wherein a depth of the second source/drain recesses is from 10% to 20% of an overall height of the epitaxial source/drain region.
 18. The method of claim 13, wherein growing the epitaxial source/drain region comprises growing a plurality of layers, each of the layers grown in the first source/drain recesses, a subset of the layers grown in the second source/drain recesses.
 19. The method of claim 13, wherein growing the epitaxial source/drain region comprises growing a plurality of layers, each of the layers grown in the first source/drain recesses, each of the layers grown in the second source/drain recesses.
 20. The method of claim 13, wherein portions of the epitaxial source/drain region between the fins are separated from the isolation region by the inner fin spacers. 